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Infineon Technologies (IPA037N08N3 G)
PartNo:
IPA037N08N3 G
Manufacturers:
Infineon Technologies
Qty:
114
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Description:
MOSFET N-KANAL POWER MOS
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
75 A
Rds On - Drain-Source Resistance:
3.7 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
29 nC
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
41 W
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
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Tube
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